Beryllium implantation induced deep level defects in p-type 6H–silicon carbide
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چکیده
منابع مشابه
Mechanical Properties of Amorphous Silicon Carbide
Excellent physical and chemical properties make silicon carbide (SiC) a prominent candidate for a variety of applications, including high-temperature, high-power, and high-frequency and optoelectronic devices, structural component in fusion reactors, cladding material for gas-cooled fission reactors, and an inert matrix for the transmutation of Pu(Katoh, Y. et al., 2007; Snead, L. L. et al., 20...
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